MJE182
数据手册.pdf
ON Semiconductor
安森美
分立器件
MJE182G 盒装
MJE170, MJE171, MJE172 PNP, MJE180, MJE181, NPN
3 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 40 − 60 − 80 VOLTS 12.5 WATTS
The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications.
Features
•Collector−Emitter Sustaining Voltage −
VCEOsus = 40 Vdc − MJE170, MJE180
= 60 Vdc − MJE171, MJE181
= 80 Vdc − MJE172, MJE182
•DC Current Gain −
hFE = 30 Min @ IC= 0.5 Adc
= 12 Min @ IC= 1.5 Adc
•Current−Gain − Bandwidth Product − fT = 50 MHz Min @ IC= 100 mAdc
•Annular Construction for Low Leakages − ICBO = 100 nA Max @ Rated VCB
•Epoxy Meets UL 94 V−0 @ 0.125 in
•ESD Ratings: Machine Model, C Human Body Model, 3B
•Pb−Free Packages are Available- .