L6391DTR
数据手册.pdfL6391 系列 双通道 290 mA 120 Ohm 高压 高压侧和低压侧 驱动器 - SOIC-14
The L6391 is a high voltage device manufactured with the BCD™ “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.
The high-side floating section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing the microcontroller/DSP.
An integrated comparator is available for protections against overcurrent, overtemperature, etc.
**Key Features**
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- High voltage rail up to 600 V
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- dV/dt immunity ± 50 V/nsec in full temperature range
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- Driver current capability:
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- 290 mA source
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- 430 mA sink
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- Switching times 75/35 nsec rise/fall with 1 nF load
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- 3.3 V, 5 V TTL/CMOS inputs with hysteresis
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- Integrated bootstrap diode
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- Comparator for fault protections
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- Smart shutdown function
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- Adjustable deadtime
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- Interlocking function
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- Compact and simplified layout
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- Bill of material reduction
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- Effective fault protection
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- Flexible, easy and fast design
