K4T1G164QQ-HCE7

1Gbit DDR2 SDRAM 800MHz 84-FBGA - K4T1G164QQ-HCE7

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin DDR2-800 for general applications.

Key Features

• JEDEC standard 1.8V ± 0.1V Power Supply

• VDDQ = 1.8V ± 0.1V

• 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin

• 8 Banks

• Posted CAS

• Programmable CAS Latency: 3, 4, 5, 6

• Programmable Additive Latency: 0, 1, 2, 3, 4, 5

• Write LatencyWL = Read LatencyRL -1

• Burst Length: 4 , 8Interleave/nibble sequential

• Programmable Sequential / Interleave Burst Mode

• Bi-directional Differential Data-Strobe Single-ended data strobe is an optional feature

• Off-Chip DriverOCD Impedance Adjustment

• On Die Termination

• Special Function Support

   - PASRPartial Array Self Refresh

   - 50ohm ODT

   - High Temperature Self-Refresh rate enable

• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C

• All of Lead-free products are compliant for RoHS