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K6T4008C1C-DB70

K6T4008C1C-DB70

数据手册.pdf
Samsung 三星 电子元器件分类

4Mbit SRAM 70ns 32-DIP - K6T4008C1C-DB70

GENERAL DESCRIPTION

The K6T4008C1C families are fabricated by SAMSUNG"s advanced CMOS process technology. The families support

various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-up operation with low data retention current.

FEATURES

·Process Technology: TFT

·Organization: 512Kx8

·Power Supply Voltage: 4.5~5.5V

·Low Data Retention Voltage: 2VMin

· Three state output and TTL Compatible

·Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP2-400F/R

K6T4008C1C-DB70中文资料参数规格
封装参数

封装 DIP

外形尺寸

封装 DIP

其他

产品生命周期 Obsolete

符合标准

RoHS标准 RoHS Compliant

K6T4008C1C-DB70引脚图与封装图
暂无图片
在线购买K6T4008C1C-DB70
型号 制造商 描述 购买
K6T4008C1C-DB70 Samsung 三星 4Mbit SRAM 70ns 32-DIP - K6T4008C1C-DB70 搜索库存
替代型号K6T4008C1C-DB70
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: K6T4008C1C-DB70

品牌: Samsung 三星

封装:

当前型号

4Mbit SRAM 70ns 32-DIP - K6T4008C1C-DB70

当前型号

型号: K6T4008C1B-DB70

品牌: 三星

封装:

功能相似

Standard SRAM, 512KX8, 70ns, CMOS, PDIP32, 0.6INCH, DIP-32

K6T4008C1C-DB70和K6T4008C1B-DB70的区别

型号: K6T4008C1C-DL70

品牌: 三星

封装:

功能相似

4Mbit SRAM 70ns 32-DIP - K6T4008C1C-DL70

K6T4008C1C-DB70和K6T4008C1C-DL70的区别