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JAN1N5621US

JAN1N5621US

数据手册.pdf

DIODE GEN PURP 800V 1A D5A

This “fast recovery” surface mount rectifier diode series is military qualified to MIL-PRF-19500/429 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are also available in axial-leaded package configurations for thru-hole mounting see separate data sheet for 1N5615 thru 1N5623. also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.

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**Features**

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Fast Reverse Recovery
.
Hermetically Sealed
.
Military Approved
.
Ruggedized Design
JAN1N5621US中文资料参数规格
技术参数

正向电压 1.6V @3A

反向恢复时间 300 ns

正向电压Max 1.6V @3A

工作温度Max 175 ℃

工作温度Min -65 ℃

封装参数

安装方式 Surface Mount

引脚数 2

封装 SQ-MELF

外形尺寸

封装 SQ-MELF

其他

产品生命周期 Active

包装方式 Bulk

符合标准

RoHS标准 Non-Compliant

含铅标准

JAN1N5621US引脚图与封装图
JAN1N5621US引脚图

JAN1N5621US引脚图

JAN1N5621US封装图

JAN1N5621US封装图

JAN1N5621US封装焊盘图

JAN1N5621US封装焊盘图

在线购买JAN1N5621US
型号 制造商 描述 购买
JAN1N5621US Microsemi 美高森美 DIODE GEN PURP 800V 1A D5A 搜索库存