锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

IRFY9130CM

数据手册.pdf
Infineon 英飞凌 电子元器件分类
IRFY9130CM中文资料参数规格
技术参数

极性 P-CH

漏源极电压Vds 100 V

连续漏极电流Ids 11.2A

输入电容Ciss 800pF @25VVds

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 75000 mW

封装参数

引脚数 3

封装 TO-257

外形尺寸

封装 TO-257

其他

产品生命周期 Active

符合标准

RoHS标准 Non-Compliant

IRFY9130CM引脚图与封装图
暂无图片
在线购买IRFY9130CM
型号 制造商 描述 购买
IRFY9130CM Infineon 英飞凌 TO-257AA P-CH 100V 11.2A 搜索库存
替代型号IRFY9130CM
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: IRFY9130CM

品牌: Infineon 英飞凌

封装:

当前型号

TO-257AA P-CH 100V 11.2A

当前型号

型号: IRFY9130

品牌: 英飞凌

封装:

完全替代

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.

IRFY9130CM和IRFY9130的区别