极性 P-CH
漏源极电压Vds 100 V
连续漏极电流Ids 11.2A
输入电容Ciss 800pF @25VVds
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 75000 mW
引脚数 3
封装 TO-257
封装 TO-257
产品生命周期 Active
RoHS标准 Non-Compliant
型号 | 制造商 | 描述 | 购买 |
---|---|---|---|
IRFY9130CM | Infineon 英飞凌 | TO-257AA P-CH 100V 11.2A | 搜索库存 |
图片 | 型号/品牌/封装 | 代替类型 | 描述 | 替代型号对比 |
---|---|---|---|---|
型号: IRFY9130CM 品牌: Infineon 英飞凌 封装: | 当前型号 | TO-257AA P-CH 100V 11.2A | 当前型号 | |
型号: IRFY9130 品牌: 英飞凌 封装: | 完全替代 | HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. | IRFY9130CM和IRFY9130的区别 |