IS42S32200C1-7BL

动态随机存取存储器 64M 2Mx32 143Mhz

OVERVIEW

ISSI"s 64Mb Synchronous DRAM IS42S32200C1 is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

FEATURES

• Clock frequency: 183, 166, 143 MHz

• Fully synchronous; all signals referenced to a positive clock edge

• Internal bank for hiding row access/precharge

• Single 3.3V power supply

• LVTTL interface

• Programmable burst length: 1, 2, 4, 8, full page

• Programmable burst sequence: Sequential/Interleave

• Self refresh modes

• 4096 refresh cycles every 64 ms

• Random column address every clock cycle

• Programmable CAS latency 2, 3 clocks

• Burst read/write and burst read/single write operations capability

• Burst termination by burst stop and precharge command

• Available in Industrial temperature grade

• Available in 400-mil 86-pin TSOP II and 90-ball BGA

• Available in Lead free