FCX555TA

双极晶体管 - 双极结型晶体管BJT 180V H-Voltage PNP Switching Transistor

- 双极 BJT - 单 PNP 180 V 700 mA 100MHz 2.1 W 表面贴装型 SOT-89-3

得捷:
TRANS PNP 180V 0.7A SOT89-3

立创商城:
PNP 180V 700mA

贸泽:
双极晶体管 - 双极结型晶体管BJT 180V H-Voltage PNP Switching Transistor

艾睿:
This specially engineered PNP FCX555TA GP BJT from Diodes Zetex comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2100 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 7 V.

安富利:
Trans GP BJT PNP 180V 0.7A 4-Pin3+Tab SOT-89 T/R

Chip1Stop:
Trans GP BJT PNP 180V 0.7A 4-Pin3+Tab SOT-89 T/R

Verical:
Trans GP BJT PNP 150V 0.7A 2100mW 4-Pin3+Tab SOT-89 T/R

Win Source:
TRANS PNP 180V 0.7A SOT-89

DeviceMart:
TRANSISTOR PNP 180V SOT-89