FDC6303N
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FDC6303N 双路场效应管, MOSFET, 双N沟道, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV
The is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
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- Very low level gate drive requirements allowing direct operation in 3V circuits
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- Gate-source Zener for ESD ruggedness
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- Replace multiple NPN digital transistors IMHxA series with one DMOS FET
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- 8V Gate-source voltage
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- 0.68A Continuous drain/output current
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- 2A Pulsed drain/output current