CY62136VNLL-70BAI
数据手册.pdf2兆位（ 128K ×16 ）静态RAM 2-Mbit 128K x 16 Static RAM
Functional Description[1]
The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ MoBL® in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE HIGH. The input/output pins I/O0 through I/O 15 are placed in a high-impedance state when: deselected CE HIGH, outputs are disabled OE HIGH, BHE and BLE are disabled BHE, BLE HIGH, or during a write operation CE LOW, and WE LOW.
Features
• Temperature Ranges
— Industrial: –40°C to 85°C
— Automotive-A: –40°C to 85°C
— Automotive-E: –40°C to 125°C
• High speed: 55 ns
• Wide voltage range: 2.7V–3.6V
• Ultra-low active, standby power
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Available in standard Pb-free 44-pin TSOP Type II, Pb-free and non Pb-free 48-ball FBGA packages
