BAS316,115
数据手册.pdf
NXP
恩智浦
分立器件
NXP BAS316,115 二极管 小信号, 单, 100 V, 250 mA, 1.25 V, 4 ns, 4 A
The BAS316 from is surface mounted high speed switching diodes. These are configured with single PN junction diode which works similar to switch and fabricated in planar technology.
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- Automotive grade AEC-Q101 qualified
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- Maximum repetitive reverse voltage of 100V
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- Power dissipation is 400mW
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- Operating ambient temperature range from -65°C to 150°C
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- Non repetitive peak forward surge current is 4A
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- Reverse recovery time of 4ns
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- Forward voltage of 1.25V at IF 150mA
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- SC-76-2 case style