BFU790F,115

BFU790 系列 2.8 V 19.5 dB 增益 NPN 硅锗 射频晶体管-SOT-343F-4

BFU790F NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

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110 GHz fT silicon germanium technology * High maximum output power at 1 dB compression 20 dBm at 1.8 GHz * Low noise high linearity RF transistor

得捷:
RF TRANS NPN 2.8V 25GHZ 4DFP

e络盟:
晶体管 双极-射频, NPN, 2.8 V, 25 GHz, 234 mW, 100 mA, 235 hFE

艾睿:
Are you looking for a component that can handle high power radio frequencies? NXP Semiconductors&s; BFU790F,115 RF amplifier is your solution. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

安富利:
Trans GP BJT NPN 2.8V 0.1A 4-Pin3+Tab DFP T/R

富昌:
BU 510 - SECURITY & CONNECTIVITY

Chip1Stop:
Trans GP BJT NPN 2.8V 0.1A 4-Pin3+Tab DFP T/R

Verical:
Trans RF BJT NPN 2.8V 0.1A 234mW 4-Pin3+Tab DFP T/R

RfMW:
Transistor

DeviceMart:
TRANSISTOR NPN SOT343F-4