AO4615

SOIC N+P 30V 7.2A/5.7A

General Description

The uses advanced trench technology MOSFETs to provide excellent RDSONand low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other

applications. It is ESD protected. Standard product AO4615 is Pb-free meets ROHS & Sony 259 specifications. AO4615L is a Green Product ordering option. AO4615and AO4615L are electrically identical

Features

n-channel p-channel

VDSV = 30V -30V

ID= 7.2A VGS=10V -5.7A VGS=10V

RDSON  RDSON

< 24mΩVGS=10V < 39mΩVGS= -10V

< 40mΩVGS=4.5V < 62mΩVGS= -4.5V

ESD rating: 1500V HBM

P-channel MOSFET has an additional ROC< 1MΩfor

open circuit protection.