ARF1500
数据手册.pdfMicrosemi(美高森美)
主动器件
RF功率MOSFET N沟道增强模式 RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
The is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
• Specified 125 Volt, 27.12 MHz Characteristics:
Output Power = 750 Watts.
Gain = 17dB Class C
Efficiency > 75%
• High Performance Power RF Package.
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Nitride Passivated Die for Improved Reliability.
• RoHS Compliant