ARF460BG

RF功率MOSFET N沟道增强模式 RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

By using a combination of metal-oxide-semiconductor technology, this RF amplifier from can be implemented in an electronic circuit as a switching device. Its maximum power dissipation is 250000 mW. Its maximum frequency is 65 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -55 °C to 150 °C.