APT30GT60BRG

功率半导体功率模块 Power Semiconductors Power Modules

You won"t need to worry about any lagging in your circuit with this IGBT transistor from . Its maximum power dissipation is 250000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.