AT25DF641A-MH-Y

闪存, Standard, 串行NOR, 64Mbit, SPI, UDFN-8

闪存 存储器 IC 64Mb（256 字节 x 32K 页） SPI 100 MHz 8-UDFN（5x6）

得捷:
IC FLASH 64MBIT SPI 100MHZ 8UDFN

立创商城:
64Mbit 2.7V~3.6V

贸泽:
Flash Memory 64M, 75MHz, 2.7-3.6V SPI Flash Memory

e络盟:
闪存, Standard, 串行NOR, 64Mbit, SPI, UDFN-8

艾睿:
NOR Flash Serial-SPI 3.3V 64M-bit 8M x 8 5ns 8-Pin UDFN EP Tray

安富利:
The AT25DF641A is a 2.7V minimum, serial-interface Flash memory ideally suited for a wide variety ofhigh-volume consumer-based applications in which program code is shadowed from Flash memory into embedded orexternal RAM for execution. The flexible erase architecture of the AT25DF641A, with its erase granularity as small as4KB, makes it ideal for data storage as well, eliminating the need for additional data storage EEPROM devices.The physical sectoring and the erase block sizes of the AT25DF641A have been optimized to meet the needs of today"scode and data storage applications. By optimizing the size of the physical sectors and erase blocks, the memory spacecan be used much more efficiently. Because certain code modules and data storage segments must reside bythemselves in their own protected sectors, the wasted and unused memory space that occurs with large sectored andlarge block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allowsadditional code routines and data storage segments to be added while still maintaining the same overall device density.The AT25DF641A also offers a sophisticated method for protecting individual sectors against erroneous or maliciousprogram and erase operations. By providing the ability to individually protect and unprotect sectors, a system canunprotect a specific sector to modify its contents while keeping the remaining sectors of the memory array securelyprotected. This is useful in applications where program code is patched or updated on a subroutine or module basis, or inapplications where data storage segments need to be modified without running the risk of errant modifications to theprogram code segments. In addition to individual sector protection capabilities, the AT25DF641A incorporates GlobalProtect and Global Unprotect features that allow the entire memory array to be either protected or unprotected all atonce. This reduces overhead during the manufacturing process since sectors do not have to be unprotected one by oneprior to initial programming.To take code and data protection to the next level, the AT25DF641A incorporates a sector lockdown mechanism thatallows any combination of individual 64KB sectors to be locked down and become permanently read-only. Thisaddresses the need of certain secure applications that require portions of the Flash memory array to be permanentlyprotected against malicious attempts at altering program code, data modules, security information orencryption/decryption algorithms, keys, and routines. The device also contains a specialized OTP One-TimeProgrammable Security Register that can be used for purposes such as unique device serialization, system-levelElectronic Serial Number ESN storage, locked key storage, or other purposes.Specifically designed for use in 3V systems, the AT25DF641A supports read, program, and erase operations with asupply voltage range of 2.7V to 3.6V. No separate voltage is required for programming and erasing.

TME:
Memory: Serial Flash; 64Mbit; 100MHz; 2.7÷3.6V; uDFN8

Verical:
NOR Flash Serial-SPI 3.3V 64M-bit 8M x 8 5ns 8-Pin UDFN EP Tray