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AT45DB161E-SSHD-T

AT45DB161E-SSHD-T

数据手册.pdf
ATMEL 爱特美尔 主动器件

FLASH/AT45DB161E-SSHD-T

Description

The Atmel AT45DB161E is a 2.3V or 2.5V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice, image, program code, and data storage applications. The AT45DB161E also supports RapidS serial interface for applications requiring very high speed operation. Its 17,301,504 bits of memory are organized as 4,096 pages of 512 bytes or 528 bytes each. In addition to the main memory, the AT45DB161E also contains two SRAM buffers of 512/528 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Interleaving between both buffers can dramatically increase a system"s ability to write a continuous data stream. In addition, the SRAM buffers can be used as additional system scratch pademory, and E2PROM emulation bit or byte alterability can be easily handled with a self-contained three step read-modify-write operation.

Features

 Single 2.3V - 3.6V or 2.5V - 3.6V supply

 Serial Peripheral Interface SPI compatible

   Supports SPI modes 0 and 3

   Supports Atmel® RapidS™ operation

 Continuous Read capability through entire array

   Up to 85MHz

   Low-power Read option up to 10MHz

   Clock-to-output time tV of 6ns maximum

 User configurable page size

   512 bytes per page

   528 bytes per page default

   Page size can be factory pre-configured for 512 bytes

 Two fully independent SRAM data buffers 512/528 bytes

   Allows receiving data while reprogramming the Main Memory Array

 Flexible programming options

   Byte/Page program 1 to 512/528 bytes directly into main memory

   Buffer Write

   Buffer to Main Memory Page Program

 Flexible Erase options

   Page Erase 512/528 bytes

   Block Erase 4KB

   Sector Erase 128KB

   Chip Erase 16-Mbits

 Program and Erase Suspend/Resume

 Advanced hardware and software data protection features

   Individual sector protection

   Individual sector lockdown to make any sector permanently read-only

 128-byte, One-Time Programmable OTP Security Register

   64 bytes factory programmed with a unique identifier

   64 bytes user programmable

 Software controlled reset

 JEDEC Standard Manufacturer and Device ID Read

 Low-power dissipation

   500nA Ultra-Deep Power-Down current typical

   3μA Deep Power-Down current typical

   25μA Standby current typical

   11mA Active Read current typical

 Endurance: 100,000 program/erase cycles per page minimum

 Data retention: 20 years

 Complies with full industrial temperature range

 Green Pb/Halide-free/RoHS compliant packaging options

   8-lead SOIC 0.150" wide

   8-pad Ultra-thin DFN 5 x 6 x 0.6mm

   9-ball Chip-scale BGA 5 x 5 x 1.2mm

AT45DB161E-SSHD-T中文资料参数规格
封装参数

安装方式 Surface Mount

封装 SOIC-8

外形尺寸

封装 SOIC-8

其他

产品生命周期 Unknown

包装方式 Tape & Reel TR

符合标准

RoHS标准 Non-Compliant

AT45DB161E-SSHD-T引脚图与封装图
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