![NTMFS4C09NBT1G_晶体管-FET,MOSFET-单个]() | | | | | 系列: - 工作温度: -55°C # 150°C (TJ) 安装类型: Surface Mount 封装/外壳: - 供应商器件封装: - |
![NTMFS4C09NBT1G_未分类]() | NTMFS4C09NBT1G | NTMFS4C09 - NFET SO8FL 30V 52A 5 未分类 | | | Packaging: Bulk Mounting Type: Surface Mount Operating Temperature: -55°C # 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: - Power Dissipation (Max): 760mW (Ta) Part Status: Active Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V |
![NTMFS4C09NBT1G_未分类]() | NTMFS4C09NBT1G | MOSFET N-CH 30V SO8FL 未分类 | | | Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C # 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: - Power Dissipation (Max): 760mW (Ta) Part Status: Active Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V |
![NTMFS4C09NBT1G_未分类]() | NTMFS4C09NBT1G | MOSFET N-CH 30V SO8FL 未分类 | | | Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C # 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: - Power Dissipation (Max): 760mW (Ta) Part Status: Active Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V |
![NTMFS4C09NBT1G_未分类]() | NTMFS4C09NBT1G | MOSFET N-CH 30V SO8FL 未分类 | | | Packaging: Digi-Reel® Mounting Type: Surface Mount Operating Temperature: -55°C # 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: - Power Dissipation (Max): 760mW (Ta) Part Status: Active Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V |