 | | DIODE SCHOTTKY 1.2KV TO252 二极管整流器 | | | 品牌: onsemi 包装: 剪切带(CT),卷带(TR) 封装/外壳: * 系列: 零件状态: 在售 二极管类型: 碳化硅肖特基 电压 - DC 反向 (Vr)(最大值): 1200 V 电流 - 平均整流 (Io): - 不同 If 时电压 - 正向 (Vf): 1.75 V 10 A 速度: 无恢复时间 > 500mA(Io) 反向恢复时间 (trr): 0 ns 不同 Vr 时电流 - 反向泄漏: 200 µA 1200 V 不同 Vr、F 时电容: 612pF 1V,100kHz 安装类型: 表面贴装型 封装/外壳: TO-252-3,DPak(2 引线 + 接片),SC-63 供应商器件封装: TO-252AA 工作温度 - 结: - 温度: |
 | | DIODE SCHOTTKY 1.2KV TO252 二极管整流器 | | | 包装: Cut Tape (CT) Alternate Packaging 系列: - 安装类型: Surface Mount 工作温度-结: - 封装/外壳: TO-252-3, DPak (2 Leads + Tab), SC-63 供应商器件封装: TO-252, (D-Pak) |
 | | DIODE SCHOTTKY 1.2KV TO252 二极管整流器 | | | 包装: Digi-Reel® Alternate Packaging 系列: - 安装类型: Surface Mount 工作温度-结: - 封装/外壳: TO-252-3, DPak (2 Leads + Tab), SC-63 供应商器件封装: TO-252, (D-Pak) |
![FFSD10120A_未分类]() | FFSD10120A | DIODE SIL CARBIDE 1200V TO252AA 未分类 | | | Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 612pF @ 1V, 100kHz Supplier Device Package: TO-252AA Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
![FFSD10120A_未分类]() | FFSD10120A | DIODE SIL CARBIDE 1200V TO252AA 未分类 | | | Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 612pF @ 1V, 100kHz Supplier Device Package: TO-252AA Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
![FFSD10120A_未分类]() | FFSD10120A | DIODE SIL CARBIDE 1200V TO252AA 未分类 | | | Packaging: Digi-Reel® Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 612pF @ 1V, 100kHz Supplier Device Package: TO-252AA Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |