| | | | | 品牌: Diodes Incorporated 包装: 卷带(TR) 封装/外壳: * 系列: 零件状态: 在售 FET 类型: P 通道 技术: MOSFET(金属氧化物) 漏源电压(Vdss): 20 V 25°C 时电流 - 连续漏极 (Id): 4.2A(Ta) 驱动电压(最大 Rds On,最小 Rds On): 1.8V,4.5V 不同 Id、Vgs 时导通电阻(最大值): 60 毫欧 4.2A,4.5V 不同 Id 时 Vgs(th)(最大值): 900mV 250µA 不同 Vgs 时栅极电荷 (Qg)(最大值): 7.6 nC 4.5 V Vgs(最大值): ±8V 不同 Vds 时输入电容 (Ciss)(最大值): 727 pF 20 V FET 功能: - 功率耗散(最大值): 1.4W 工作温度: -55°C # 150°C(TJ) 安装类型: 表面贴装型 供应商器件封装: SOT-23-3 封装/外壳: TO-236-3,SC-59,SOT-23-3 温度: -55°C # 150°C(TJ) |
| | | | | 系列: - 工作温度: -55°C # 150°C (TJ) 安装类型: Surface Mount 封装/外壳: TO-236-3, SC-59, SOT-23-3 供应商器件封装: SOT-23-3 |
| | | | | 系列: - 工作温度: -55°C # 150°C (TJ) 安装类型: Surface Mount 封装/外壳: TO-236-3, SC-59, SOT-23-3 供应商器件封装: SOT-23-3 |
| | | | | 系列: - 工作温度: -55°C # 150°C (TJ) 安装类型: Surface Mount 封装/外壳: TO-236-3, SC-59, SOT-23-3 供应商器件封装: SOT-23-3 |
| DMP2305UVT-7 | MOSFET P-CH 20V 4.2A SOT23-3 未分类 | | | Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V FET Feature: - Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V |
| DMP2305UVT-7 | MOSFET P-CH 20V 4.2A SOT23-3 未分类 | | | Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V FET Feature: - Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V |
| DMP2305UVT-7 | MOSFET P-CH 20V 4.2A SOT23-3 未分类 | | | Packaging: Digi-Reel® Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V FET Feature: - Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V |