AFT21H350W03SR6

RF Power Transistor,2110 to 2170MHz, 110W, Typ Gain in dB is 16.4 @ 2110MHz, 28V, LDMOS, SOT1829

Overview

The and AFT21H350W04GSR6 63 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2170 MHz.

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## Features

* Advanced High Performance In-Package Doherty

* Designed for Wide Instantaneous Bandwidth Applications

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* RoHS Compliant

* In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.

## Features RF Performance Table

### 2100 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 750 mA, VGSB = 0.7 Vdc, Pout = 63 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

2110 MHz| 16.4| 47.1| 7.5| –26.0

2140 MHz| 16.5| 46.3| 7.5| –27.9

2170 MHz| 16.5| 45.2| 7.4| –30.1