IXTH40N30

IXYS SEMICONDUCTOR IXTH40N30 晶体管, MOSFET, N沟道, 40 A, 300 V, 85 mohm, 10 V, 4 V

The is a MegaMOS™ single N-channel enhancement-mode standard Power MOSFET offers rugged polysilicon gate cell structure and high power density. It is suitable for DC choppers, switch-mode and resonant-mode power supplies.

.: International standard packages

.: Low RDS ON HDMOS™ process

.: Low package inductance <5nH - Easy to drive and to protect

.: Fast switching times

.: Easy to mount with 1 screw isolated mounting screw hole

.: Space saving

IXTH40N30替代型号 IXTH40N30详细参数

IXTH40N30 PDF数据文档

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