IXBH40N160

N-沟道 1600 V 40 A 法兰安装 高压 BiMosFET - TO-247AD

You can use this IGBT transistor from Ixys Corporation as an electronic switch. It has a maximum collector emitter voltage of 1600 V. Its maximum power dissipation is 350000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

得捷:
IGBT 1600V 33A 350W TO247AD

贸泽:
IGBT Transistors 1600V 33A

艾睿:
You can use this IXBH40N160 IGBT transistor from Ixys Corporation as an electronic switch. It has a maximum collector emitter voltage of 1600 V. Its maximum power dissipation is 350000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

富昌:
N-Channel 1600 V 40 A Flange Mount High Voltage BiMosFET - TO-247AD

Verical:
Trans IGBT Chip N-CH 1600V 33A 350000mW 3-Pin3+Tab TO-247AD

DeviceMart:
IGBT 1600V 33A 350W TO247AD