IPB80N06S407ATMA1
数据手册.pdfD2PAK N-CH 60V 80A
表面贴装型 N 通道 80A（Tc） 79W（Tc） PG-TO263-3-2
得捷:
MOSFET N-CH 60V 80A TO263-3
贸泽:
MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS-T2
艾睿:
As an alternative to traditional transistors, the IPB80N06S407ATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 79000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos-t2 technology.
安富利:
Trans MOSFET N-CH 80V 80A 3-Pin2+Tab TO-263
Verical:
Trans MOSFET N-CH 60V 80A Automotive 3-Pin2+Tab D2PAK T/R