锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

IRFI840GPBF

IRFI840GPBF

数据手册.pdf

VISHAY  IRFI840GPBF  晶体管, MOSFET, N沟道, 4.6 A, 500 V, 850 mohm, 10 V, 4 V

The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.

.
Isolated package
.
2.5kVRMS t = 60s, f = 60Hz High voltage isolation
.
4.8mm Sink to lead creepage distance
.
Dynamic dV/dt rating
.
Low thermal resistance
IRFI840GPBF中文资料参数规格
技术参数

额定电压DC 500 V

额定电流 4.60 A

额定功率 40 W

针脚数 3

漏源极电阻 0.85 Ω

极性 N-Channel

耗散功率 40 W

阈值电压 4 V

输入电容 1300pF @25V

漏源极电压Vds 500 V

漏源击穿电压 500 V

连续漏极电流Ids 4.60 A

上升时间 22 ns

隔离电压 2.50 kV

输入电容Ciss 1300pF @25VVds

下降时间 21 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 40 W

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

高度 9.8 mm

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 150℃

其他

包装方式 Tube

制造应用 Industrial, Power Management, Commercial

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

IRFI840GPBF引脚图与封装图
暂无图片
在线购买IRFI840GPBF
型号 制造商 描述 购买
IRFI840GPBF Vishay Semiconductor 威世 VISHAY  IRFI840GPBF  晶体管, MOSFET, N沟道, 4.6 A, 500 V, 850 mohm, 10 V, 4 V 搜索库存