IRFR224TRPBF

N 通道 MOSFET，200V 至 250V，Vishay Semiconductor### MOSFET 晶体管，Vishay Semiconductor

The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.

.

Dynamic dV/dt rating

.

Ease of paralleling

.

Surface-mount

.

Repetitive avalanche rated