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DMG4511SK4-13

DMG4511SK4-13

数据手册.pdf
Diodes(美台) 分立器件

Trans MOSFET N/P-CH 35V 8.6A/7.8A 5Pin TO-252 T/R

Mosfet Array N and P-Channel, Common Drain 35V 1.54W Surface Mount TO-252-4L


得捷:
MOSFET N/P-CH 35V TO252-4L


艾睿:
Make an effective common source amplifier using this DMG4511SK4-13 power MOSFET from Diodes Zetex. Its maximum power dissipation is 4100 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N|P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.


安富利:
Trans MOSFET N/P-CH 35V 8.6A/7.8A 5-Pin TO-252 T/R


TME:
Transistor: N/P-MOSFET; unipolar; 35/-35V; 7.8/-8.6A; 1.54W


Verical:
Trans MOSFET N/P-CH 35V 8.6A/7.8A Automotive 5-Pin4+Tab DPAK T/R


Win Source:
MOSFET N/P-CH 35V TO252-4L


DeviceMart:
MOSFET N/P-CH 35V TO252-4L


DMG4511SK4-13中文资料参数规格
技术参数

额定功率 1.54 W

极性 N+P

耗散功率 8.9 W

漏源极电压Vds 35 V

连续漏极电流Ids 8.6A/7.8A

输入电容Ciss 850pF @25VVds

额定功率Max 1.54 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 8900 mW

封装参数

安装方式 Surface Mount

引脚数 5

封装 TO-252-5

外形尺寸

封装 TO-252-5

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

DMG4511SK4-13引脚图与封装图
暂无图片
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型号 制造商 描述 购买
DMG4511SK4-13 Diodes 美台 Trans MOSFET N/P-CH 35V 8.6A/7.8A 5Pin TO-252 T/R 搜索库存