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NVMFS5C670NLT3G

NVMFS5C670NLT3G

数据手册.pdf
ON Semiconductor 安森美 分立器件

ON SEMICONDUCTOR  NVMFS5C670NLT3G  晶体管, MOSFET, N沟道, 71 A, 60 V, 0.0051 ohm, 10 V, 2 V

N-Channel 60V 17A Ta, 71A Tc 3.6W Ta, 61W Tc Surface Mount 5-DFN 5x6 8-SOFL


得捷:
MOSFET N-CH 60V 17A/71A 5DFN


艾睿:
This NVMFS5C670NLT3G power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 3600 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.


安富利:
Trans MOSFET N-CH 60V 17A 8-Pin SO-FL T/R


立创商城:
NVMFS5C670NLT3G


Verical:
Trans MOSFET N-CH 60V 17A Automotive 5-Pin4+Tab SO-FL T/R


Newark:
# ON SEMICONDUCTOR  NVMFS5C670NLT3G  MOSFET Transistor, N Channel, 71 A, 60 V, 0.0051 ohm, 10 V, 2 V


力源芯城:
60V,71A,6.1mΩ,单N沟道功率MOSFET


NVMFS5C670NLT3G中文资料参数规格
技术参数

针脚数 5

漏源极电阻 0.0051 Ω

极性 N-Channel

耗散功率 61 W

阈值电压 2 V

漏源极电压Vds 60 V

连续漏极电流Ids 17A

上升时间 60 ns

输入电容Ciss 1400pF @25VVds

下降时间 4 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 3.6W Ta, 61W Tc

封装参数

安装方式 Surface Mount

引脚数 5

封装 DFN-5

外形尺寸

封装 DFN-5

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准

含铅标准 Lead Free

REACH SVHC版本 2015/12/17

NVMFS5C670NLT3G引脚图与封装图
暂无图片
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型号 制造商 描述 购买
NVMFS5C670NLT3G ON Semiconductor 安森美 ON SEMICONDUCTOR  NVMFS5C670NLT3G  晶体管, MOSFET, N沟道, 71 A, 60 V, 0.0051 ohm, 10 V, 2 V 搜索库存