TIP31BG

ON SEMICONDUCTOR  TIP31BG  射频双极晶体管

If you require a general purpose BJT that can handle high voltages, then the NPN BJT, developed by , is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.