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STL33N60M2

STL33N60M2

数据手册.pdf

Trans MOSFET N-CH 600V 21.5A 4Pin Power Flat EP T/R

N-Channel 600V 22A Tc 190W Tc Surface Mount PowerFlat™ 8x8 HV


得捷:
MOSFET N-CH 600V 22A PWRFLAT HV


艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? STMicroelectronics&s; STL33N60M2 power MOSFET can provide a solution. Its maximum power dissipation is 2800 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh technology. This N channel MOSFET transistor operates in enhancement mode.


安富利:
Trans MOSFET N-CH 650V 21.5A 4-Pin PowerFLAT T/R


富昌:
N 沟道 600 V 21.5 A 115 mOhm MDmesh M2 功率 Mosfet - PowerFLAT 8 x 8


Chip1Stop:
Trans MOSFET N-CH 600V 21.5A 4-Pin Power Flat EP T/R


Verical:
Trans MOSFET N-CH 600V 21.5A 4-Pin Power Flat EP T/R


STL33N60M2中文资料参数规格
技术参数

耗散功率 150 W

漏源极电压Vds 650 V

输入电容Ciss 1700pF @100VVds

额定功率Max 2.8 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 190W Tc

封装参数

安装方式 Surface Mount

引脚数 5

封装 PowerVDFN-8

外形尺寸

封装 PowerVDFN-8

物理参数

工作温度 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

STL33N60M2引脚图与封装图
暂无图片
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