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STI150N10F7

STI150N10F7

数据手册.pdf

I2PAK N-CH 100V 110A

通孔 N 通道 110A(Tc) 250W(Tc) I2PAK(TO-262)


得捷:
MOSFET N-CH 100V 110A I2PAK


贸泽:
MOSFET N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in I2PAK package


艾睿:
Compared to traditional transistors, STI150N10F7 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 250000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes stripfet vii technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.


安富利:
Trans MOSFET N-CH 100V 110A 3-Pin I2PAK Tube


Chip1Stop:
Trans MOSFET N-CH 100V 110A 3-Pin3+Tab I2PAK Tube


Verical:
Trans MOSFET N-CH 100V 110A 3-Pin3+Tab I2PAK Tube


儒卓力:
**N-CH 100V 110A 4,2mOhm I2PAK **


STI150N10F7中文资料参数规格
技术参数

极性 N-CH

耗散功率 250 W

漏源极电压Vds 100 V

连续漏极电流Ids 110A

上升时间 57 ns

输入电容Ciss 8115pF @50VVds

下降时间 33 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 250W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-262-3

外形尺寸

封装 TO-262-3

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

海关信息

ECCN代码 EAR99

STI150N10F7引脚图与封装图
暂无图片
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