STGD5NB120SZ-1

STGD5NB120SZ 系列 1200 V 10 A 低压差 内部钳位 IGBT - TO-252-3

IGBT - 1200 V 10 A 75 W 通孔 I-PAK

得捷:
IGBT 1200V 10A 75W DPAK

贸泽:
IGBT Transistors 5 A 1200V LOW DROP INTERN CLAMPED IGBT

艾睿:
You can use this STGD5NB120SZ-1 IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 75000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a maximum operating temperature of 150 °C. It is made in a single configuration.

安富利:
Trans IGBT Chip N-CH 1.2KV 10A 3-Pin3+Tab IPAK Tube

富昌:
IPAK TO-251

Chip1Stop:
Trans IGBT Chip N-CH 1200V 10A 75000mW 3-Pin3+Tab IPAK Tube

TME:
Transistor: IGBT; 1200V; 5A; 75W; IPAK