PXAC243502FVV1XWSA1

射频金属氧化物半导体场效应RF MOSFET晶体管 RFP-LD10M

Summary of Features:

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Asymmetric design

\- Main: 150W P1dB

\- Peak: 200W P1dB

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Broadband internal matching

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CW performance at 2350MHz, 28V

\- Ouput power = 250W P1dB

\- Efficiency = 46%

\- Gain = 16dB

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Integrated ESD protection

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Human Body Model Class 2 per ANSI/ESDA/JEDEC JS-001

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Low thermal resistance

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Pb-free and RoHS-compliant